TIP41B Datasheet | STMicroelectronics

DESCRIPTION The TIP41A, TIP41B and TIP41C are silicon Epitaxial-Base NPN power transistors mounted in Jedec TO-220 plastic package. They are intented for use in medium power linear and switching applications. The TIP41A and TIP41C plementary PNP types are TIP42A and TIP42C respectively. TO-220 3 1 2 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CEO VEBO IC ICM IB P tot Tstg Tj Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T case ≤ 25 o C T amb ≤ 25 o C Storage Temperature Max. Operating Junction Temperature TIP41A TIP42A 60 60 Value TIP41B 80 80 5 6 10 3 65 2 -65 to 150 150 Unit TIP41C TIP42C 100 100 V V V A A A W W o C o C For PNP types voltage and current values are negative. October 1999 1/4 TIP41A/TIP41B/TIP41C/TIP42A/TIP42C THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.92 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) Symbol I CEO I CES Parameter Collector Cut-off Current (I B = 0) Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Conditions for TIP41A/42A for TIP41B/41C/42C for TIP41A/42A for TIP41B for TIP41C/42C V EB = 5 V I C = 30 m A for TIP41A/42A for TIP41B for TIP41C/42C IC = 6 A IC = 6 A I C = 0.3 A IC = 3 A I C = 0.5 A I C = 0.5 A I B = 0.6 A V CE = 4 V V CE = 4 V V CE = 4 V V CE = 10 V V CE = 10 V f = 1 KHz f = 1 MHz 30 15 20 3 V CE = 30 V V CE = 60 V V CE = 60 V V CE = 80 V V CE = 100 V Min. Typ. Max. 0.7 0.7 0.4 0.4 0.4 1 Unit m A m A m A m A m A m A IEBO V CEO(sus) - Collector-Emitter Sustaining Voltage (I B = 0) VCE(sat) - V BE(on) - h FE - h fe Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain Small Signal Current Gain 60 80 100 1.5 2 75 V V V V V ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % For PNP types...