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TM8050H-8W - 80A high temperature Thyristor

General Description

Available in high power package (TO-247), the device is suitable in applications where power switching (IT(RMS) = 80 A at TC = 126 °C) and power dissipation (VTM = 1.55 V at 160 A) are critical, such as motorbike voltage regulator, bypass AC switch, controlled recti

Key Features

  • High junction temperature: Tj = 150 °C.
  • Blocking voltage: VDRM = VRRM = 800 V.
  • Nominal current: IT(RMS) = 80 A.
  • Gate triggering current: IGT max. = 50 mA.
  • High noise immunity: dV/dt > 1 kV/µs.
  • Through hole package TO-247.
  • Ecopack®2 (includes halogen free & RoHS compliance).
  • Increase of thermal margin due to extended Tj up to 150 °C.
  • Low ID and IR in blocking state.

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Other Datasheets by STMicroelectronics

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TM8050H-8D3 80A high temperature Thyristor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TM8050H-8W 80 A high temperature Thyristor (SCR) Datasheet - production data A G TAB = A K G A K TO-247 uninsulated Features  High junction temperature: Tj = 150 °C  Blocking voltage: VDRM = VRRM = 800 V  Nominal current: IT(RMS) = 80 A  Gate triggering current: IGT max.