DESCRIPTION
Metal to silicon rectifier diodes in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits. ABSOLUTE MAXIMUM RATINGS
(limiting values) Symbol VRRM IF (AV) IFSM Parameter Repetitive Peak Reverse Voltage Average Forward Current Surge non Repetitive Forward Current Ti = 60 °C Ti = 25 °C tp = 10ms Ti = 25 °C tp = 300µs Tstg Tj TL Storage and Junction Temperature Range Maximum Lead Temperature for Soldering during 15s MELF (Glass) Value 40 1 25 Sinusoïdal Pulse 50 Rectangular Pulse - 65 to 150 - 65 to 125 260 Unit V A A °C °C °C THERMAL RESISTANCE Symbol Rth (j - l) Junction-leads Parameter Value 110 Unit °C/W * Pulse test: tp ≤ 300µs δ < 2%. August 1999 Ed: 1A 1/4 TMBYV10-40 ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS Synbol IR* Tj = 25°C Tj = 100°C VF* IF = 1A IF = 3A * * Pulse test: tp ≤ 300µs δ < 2%. Test Conditions VR = VRRM Min. Typ. Max. 0.5 Unit mA 10 Tj = 25°C 0.55 0.85 V DYNAMIC CHARACTERISTICS Symbol C Tj = 25°C Test Conditions VR = 0 Min.
STMicroelectronics
