STMicroelectronics TMM6263
This publication supersedes and replaces all information previously supplied.| Part No. | TMM6263 |
|---|---|
| Datasheet | TMM6263 Download |
| Manufacturer |  STMicroelectronics |
| Description | SMALL SIGNAL SCHOTTKY DIODE |
| Buy | Stock & Price |
DESCRIPTION
Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range.ABSOLUTE MAXIMUM RATINGS
(limiting values) Symbol VRRM IF IFSM Tstg Tj TL Parameter Repetitive Peak Reverse Voltage Forward Continuous Current Surge non Repetitive Forward Current Storage and Junction Temperature Range Maximum Temperature for Soldering during 15s Ti = 25 °C tp ≤ 1s MINIMELF (Glass) Value 60 15 50 - 65 to 200 -65 to 200 260 Unit V mA mA °C °C THERMAL RESISTANCE Symbol Rth(j-l) Junction-leads Test Conditions Value 400 Unit °C/WELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS Symbol VBR VF* Tamb = 25°C Tamb = 25°C Tamb = 25°C IR* Tamb = 25°C Test Conditions IR = 10µA IF = 1mA IF = 15mA VR = 50V Min. 60 0.41 1 0.2 µA Typ. Max. Unit V V DYNAMIC CHARACTERISTICS Symbol C τ Tamb = 25°C Tamb = 25°C Test Conditions VR = 0V IF = 5mA f = 1MHz Krakauer Method Min. Typ. Max.
