TN5015H-6G Overview
Thanks to its junction temperature Tj up to 150 °C, the device offers high thermal performance operation up to 50 A. Its D²PAK package allows modern SMD designs as well as pact back to back configuration. Its trade-off noise immunity (dV/dt = 500 V/μs) versus its gate triggering current (IGT = 15 mA) and its turn-on current rise (dI/dt = 100 A/μs) allow to design robust and pact control circuit for voltage regulator...
TN5015H-6G Key Features
- High junction temperature: Tj = 150 °C
- Gate triggering current IGT = 15 mA
- Peak off-state voltage VDRM/VRRM = 600 V
- High turn-on current rise dI/dt = 100 A/µs
- ECOPACK®2 pliant ponent