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TPDV640 Datasheet PDF

STMicroelectronics TPDV640

The TPDVxx40 series use a high performance alternistor technology. Featuring very high commutation levels and high surge current capability, this family is well adapted to power control on inductive load (motor, transformer...).
Part No. TPDV640
Datasheet TPDV640 Download
Manufacturer
STMicroelectronics
Description Triac
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TPDV640 datasheet page 1 preview

FEATURES

● On-state current (IT(RMS)): 40 A
● Max. blocking voltage (VDRM/VRRM): 1200 V
● Gate current (IGT): 200 mA
● Commutation at 10 V/µs: up to 142 A/ms
● Noise immunity: 500 V/µs
● Insulated package: – 2,500 V rms (UL recognized: E81734) 40 A high voltage Triacs Datasheet - production data

DESCRIPTION

Table 1. Device summary Parameter TPDV640RG Blocking voltage VDRM/VRRM 600 V On-state current IT(RMS) Gate current IGT TPDV840RG 800 V 40 A 200 mA TPDV1240RG 1200 V June 2015 This is information on a product in full production. DocID18270 Rev 2 1/8 Characteristics 1 Characteristics TPDVxx40 Table 2. Absolute ratings (limiting values) Symbol Parameter Value IT(RMS) ITSM I2t dI/dt VDRM VRRM On-state rms current (180° conduction angle) Tc = 75 °C Non repetitive surge peak on-state current I2t value for fusing tp = 2.5 ms tp = 8.3 ms tp = 10 ms tp = 10 ms Tj = 25 °C Tj = 25 °C Critical rate of rise of on-state current Repetitive F = 50 Hz IG = 500 mA; dlG/dt = 1 A/µs Non repetitive TPDV...
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