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TPP25011 Datasheet PDF

STMicroelectronics TPP25011

The breakdown voltage can be easily programmed by using an external zener diode. The current limiting function is achieved with the use of a resistorbetween the gate and the cathode.
Part No. TPP25011
Datasheet TPP25011 Download
Manufacturer
STMicroelectronics
Description OVERVOLTAGE and OVERCURRENT PROTECTION
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TPP25011 datasheet page 1 preview

FEATURES

UNIDIRECTIONAL FUNCTION PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 250 V PROGRAMMABLE CURRENT LIMITATION FROM 40 mA TO 500 mA SURGE CURRENT CAPABILITY IPP = 30A 10/1000 µs

DESCRIPTION

Dedicated to sensitive telecom equipment protection, this device can provide both voltage and current triggered protection with a very tight tolerance. A multiple protection mode can be also performed when using several zener diodes, providing to each line interface an optimized protection level. The value of the resistor will determine the level of the desired current. COMPLIESWITHTHE FOLLOWINGSTANDARDS : CCITT K17 : VDE 0433 : CNET : FCC part 68 : BELLCORE TR-NWT-000974 : (*) with series resistors or PTC. OVERVOLTAGE and OVERCURRENT PROTECTION for TELECOM LINE SO8 SCHEMATIC DIAGRAM 10/700 5/310 10/700 5/310 0.5/700 0.2/310 2/10 2/10 µs µs µs µs µs µs µs µs 1.5 38 2k 40 1.5 38 2.5 75 kV A V A (*) kV A kV A (*) 10/1000 µs 10/1000 µs 1 kV 30 A (*) TM: ASD is trademarks of SGS-THOMSON Microelectronics. F...
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