STMicroelectronics TRD136D
This device is an NPN power transistor manufactured using high voltage multi epitaxial planar technology for high switching speeds. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a satisfactory RBSOA.FEATURES
● High voltage capability● Low spread of dynamic parameters
● Minimum lot-to-lot spread for reliable operation
● Very high switching speed
● Integrated antiparallel collector-emitter diode
APPLICATIONS
● Electronic ballast for fluorescent lighting● Electronic transformer for halogen lamps 3 1 TO-252 (DPAK)
DESCRIPTION
Figure 1. Internal schematic diagram Table 1. Device summary Part number TRD136DT4 Marking TRD136D Package TO-252 Packaging Tape and reel June 2011 Doc ID 018979 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/12 12 Contents Contents TRD136D 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.2 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .