TS110-7 Datasheet | STMicroelectronics

Features - On-state rms current, IT(RMS) 1.25 A - Repetitive peak off-state voltage, VDRM/VRRM, 700 V - Non-repetitive direct surge peak off-state voltage, 1250 V - Non-repetitive reverse surge peak off-state voltage, 850 V - Triggering gate current, IGT (Q1) 100 µA Applications - Ground fault circuit interrupters - Arc fault circuit interrupters - Overvoltage crowbar protection in power supplies - Residual current device - Residual current circuit breaker with overload protection Description Thanks to highly sensitive triggering levels, the TS110-7 series is suitable for circuit breaker applications where the available gate current is limited. Such applications include GFCI (ground fault circuit interrupter), AFCI (arc fault circuit interrupter), RCD (residual current device), and RCBO (residual current circuit breaker with overload protection). This device is optimized in forward voltage drop and inrush current capabilities for reduced power losses and high reliability in harsh environments. TS110-7 enables high robustness of the whole circuit breaker. The low leakage current of the TS110-7 reduces power consumption over the entire lifetime of the circuit breaker. The TS110-7 is available in through-hole TO-92 package with GAK pinout and in SMBflat-3L. DS8670 - Rev 5 - April 2023 For further information contact your local STMicroelectronics sales office. .st. Characteristics Characteristics Symbol IT(RMS) IT(AV) ITSM I2t dl/dt VDRM, VRRM VDSM VRSM IGM PG(AV) Tstg Tj Table 1. Absolute ratings (limiting values, TJ = 25 °C unless otherwise specified) Parameters RMS on-state current (180 ° conduction angle) Average on-state current (180 ° conduction angle) Non repetitive surge peak on-state current 1st step: one surge every 5 seconds, 25 surges 2nd step: one surge every 5 seconds, 25 surges I2t value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns Critical rate of rise of on-state current Gate open, VD =...