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TSB582 - BiCMOS dual operational amplifier

Description

The TSB582 is a unity gain stable, dual operational amplifier with high voltage and high current capability, featuring internal protections against overtemperature and current overload conditions.

In addition, the TSB582 has enhanced ESD and RF noise immunity.

Features

  • Wide supply voltage: 4 V - 36 V.
  • High output current 200 mA.
  • Rail-to-rail output, low rail input.
  • Gain bandwidth product: 3.1 MHz.
  • High slew rate: 2 V/µs.
  • Internal thermal shutdown & output current limiter.
  • Enhanced RF noise immunity.
  • High tolerance to ESD: 4 kV HBM.
  • Extended temperature range: -40 °C to 125 °C.
  • Automotive grade.
  • Low noise 45 nV/√Hz @ 1 kHz.
  • Icc (typ. ) = 2.3.

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Datasheet preview – TSB582

Datasheet Details

Part number TSB582
Manufacturer STMicroelectronics
File Size 2.52 MB
Description BiCMOS dual operational amplifier
Datasheet download datasheet TSB582 Datasheet
Additional preview pages of the TSB582 datasheet.

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Full PDF Text Transcription

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TSB582 Datasheet 200 mA output current with thermal shutdown and output current limiter, 3.1 MHz, 36 V, BiCMOS dual operational amplifier SO8 Exposed Pad DFN8 (3 x 3 mm) Exposed Pad, Wettable Flank Maturity status link TSB582 Features • Wide supply voltage: 4 V - 36 V • High output current 200 mA • Rail-to-rail output, low rail input • Gain bandwidth product: 3.1 MHz • High slew rate: 2 V/µs • Internal thermal shutdown & output current limiter • Enhanced RF noise immunity • High tolerance to ESD: 4 kV HBM • Extended temperature range: -40 °C to 125 °C • Automotive grade • Low noise 45 nV/√Hz @ 1 kHz • Icc (typ.) = 2.3 mA • Unity gain stable • Low offset 2.4 mV max. (25 °C) / 3 mV max.
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