STMicroelectronics TSD57045
The SD57045 is a common source N-Channel Enhancement-Mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57045 is designed for high gain and broadband performance operating in common source mode at 28V.| Part No. | TSD57045 |
|---|---|
| Datasheet | TSD57045 Download |
| Manufacturer |  STMicroelectronics |
| Description | RF POWER TRANSISTORS The LdmoSTFAMILY |
| Buy | Stock & Price |
DESCRIPTION
It is ideal for base stations applications requiring high linearity. PIN CONNECTION 1. Drain 2. GateABSOLUTE MAXIMUM RATINGS
(Tcase = 25 oC) Symbol V (BR)DSS V DGR V GS ID P DI SS Tj T STG Parameter Drain Source Voltage Drain-Gate Voltage (R GS = 1 M Ω ) Gate-Source Voltage Drain Current Power Dissipation (@ T c = 70 C) Max. O perating Junction Temperature Storage Temperature o 3.Source Value 65 65 ± 20 5 93 200 -65 to 200 Uni t V V V A W o o C C THERMAL DATA (Tcase = 70 oC) R th (j-c) R th(c -s) Junction-Case Thermal Resistance Case-Heatsink Thermal Resistance 1.4 0.45 o o C/W C/W * Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent). March 2000 1/11 SD57045 ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC Symb ol V (BR)DSS I DSS I GSS V GS(Q) V DS( ON) G FS C ISS C OSS C RSS V GS = 0V V GS = 0V V GS = 20V V DS = 28V V GS = 10V V DS = 10V V GS = 0V V GS = 0V V GS = 0V Parameter I DS = 1 mA V DS = 28 V V DS = 0 V I D = 250 mA ID = 3 A ID = 5 A V DS = 28 V V DS = 28 V V DS = 28 V f = 1 MHz f = 1 MHz f = 1 MHz 2.0 2.5 0.7 2.7 80 40 3.2 Min.
