STMicroelectronics TSD57060-01
The SD57060-01 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57060-01 is designed for high gain and broadband performance operating in common source mode at 28V.| Part No. | TSD57060-01 |
|---|---|
| Datasheet | TSD57060-01 Download |
| Manufacturer |  STMicroelectronics |
| Description | RF POWER TRANSISTORS The LdmoSTFAMILY |
| Buy | Stock & Price |
DESCRIPTION
It is ideal for base station applications requiring high linearity. PIN CONNECTION 1. Drain 2. GateABSOLUTE MAXIMUM RATINGS
(Tcase = 25 oC) Symbol V (BR)DSS V GS ID P DI SS Tj T STG Parameter Drain Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc= 70o C) Max. O perating Junction Temperature Storage T emperature Value 65 ± 20 7 118 200 -65 to 150 3.Source Uni t V V A W o o C C THERMAL DATA (Tcase = 70 oC) R th (j-c) R th(c -s)* Junction-Case Thermal Resistance Case-Heatsink T hermal Resistance 1.1 0.5 o o C/W C/W * Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent). January 2000 1/8 SD57060-01 ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC Symb ol V (BR)DSS I DSS I GSS V GS(Q) V DS( ON) G FS C ISS C OSS C RSS V GS = 0V V GS = 0V V GS = 20V V DS = 28V V GS = 10V V DS = 10V V GS = 0V V GS = 0V V GS = 0V Parameter IDS = 1 mA VDS = 28 V V DS = 0 V ID = 100 mA ID = 3 A ID = 3 A VDS = 28 V VDS = 28 V VDS = 28 V f = 1 MHz f = 1 MHz f = 1 MHz 2.5 88 44 2.8 REF.
