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TSU114 - 5V CMOS operational amplifier

Download the TSU114 datasheet PDF. This datasheet also covers the TSU111 variant, as both devices belong to the same 5v cmos operational amplifier family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Sub-micro ampere current consumption: Icc = 900 nA typ. at 25 °C.
  • Low offset voltage: 150 µV max. at 25 °C, 235 µV max. over full temperature range (-40 to 85 °C).
  • Low noise over 0.1 to 10 Hz bandwidth: 3.6 µVpp.
  • Low supply voltage: 1.5 V to 5.5 V.
  • Rail-to-rail input and output.
  • Gain bandwidth product: 11.5 kHz typ.
  • Low input bias current: 10 pA max. at 25 °C.
  • High tolerance to ESD: 4 kV HBM.
  • More than 25 years of.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TSU111-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

Part Number Description
TSU111 5V CMOS operational amplifier
TSU111H 5V CMOS operational amplifier
TSU111IY CMOS operational amplifier
TSU112 5V CMOS operational amplifier
TSU112IY CMOS operational amplifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TSU111, TSU112, TSU114 Datasheet Nanopower (900 nA), high accuracy (150 µV) 5 V CMOS operational amplifier Features • Sub-micro ampere current consumption: Icc = 900 nA typ. at 25 °C • Low offset voltage: 150 µV max. at 25 °C, 235 µV max. over full temperature range (-40 to 85 °C) • Low noise over 0.1 to 10 Hz bandwidth: 3.6 µVpp • Low supply voltage: 1.5 V to 5.5 V • Rail-to-rail input and output • Gain bandwidth product: 11.5 kHz typ. • Low input bias current: 10 pA max. at 25 °C • High tolerance to ESD: 4 kV HBM • More than 25 years of typical equivalent lifetime supplied by a 220 mA.