Datasheet Details
| Part number | TYP212 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 67.28 KB |
| Description | SCR FOR OVERVOLTAGE PROTECTION |
| Datasheet | TYP212_STMicroelectronics.pdf |
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Overview: TYP 212 --->TYP 2012 SCR FOR OVERVOLTAGE PROTECTION . . .
| Part number | TYP212 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 67.28 KB |
| Description | SCR FOR OVERVOLTAGE PROTECTION |
| Datasheet | TYP212_STMicroelectronics.pdf |
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The TYP 212 ---> 1012 Family uses high performance glass passivated chips technology.
These Silicon Controlled Rectifiers are designed for overvoltage protection in crowbar circuits application.
K AG TO220AB (Plastic) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) IT(AV) ITSM Parameter RMS on-state current (180° conduction angle, single phase circuit) Average on-state current (180° conduction angle, single phase circuit) Non repetitive surge peak on-state current ( Tj initial = 25°C ) I2 t value Non repetitive surge peak on-state current ( Tj initial = 25°C ) Exponential pulse wave form Critical rate of rise of on-state current Gate supply : IG = 100 mA diG/dt = 1 A/µs Storage and operating junction temperature range Maximum lead temperature for soldering during 10 s at 4.5 mm from case Tc = 110 °C Tc = 110 °C tp = 8.3 ms tp = 10 ms tp = 10 ms tp = 1 ms Value 12 8 315 300 450 750 A2s A Unit A A A I2t ITM dI/dt 100 A/µs °C °C °C Tstg Tj Tl - 40 to + 150 - 40 to + 125 260 Symbol Parameter 212 512 50 TYP 1012 100 2012 200 Unit VDRM VRRM April 1995 Repetitive peak off-state voltage Tj = 125 °C 25 V 1/5 TYP 212 ---> TYP 2012 THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient Parameter Value 60 1.3 Unit °C/W °C/W Rth (j-c) DC Junction to case for DC GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 10W (tp = 20 µs) IFGM = 4A (tp = 20 µs) VRGM = 5 V.
| Part Number | Description |
|---|---|
| TYP2012 | SCR FOR OVERVOLTAGE PROTECTION |
| TYP1012 | SCR |
| TYP512 | SCR FOR OVERVOLTAGE PROTECTION |
| TYP512 | SCR |