USB6B1 Overview
In order to prevent fast transients from leading to severe damages in a high speed data system, a specific protection has been developed by STMicroelectronics. The USB6B1 protects the two input lines against overvoltage. Besides, this device also keeps the power rails in a safe limit thanks to the integrated Transil diode.
USB6B1 Key Features
- Full diode bridge with integrated clamping protection
- Breakdown voltage: VBR = 6 V min
- Peak pulse power dissipation: PPP = 500 W
- Very low capacitance, patible with high
- Provides protection for each line and between the supply voltage and GND: 25 A, 8/20 µs
- High ESD protection level: up to level 3 per MIL STD 883C-Method 3015-6
- Separated inputs and outputs (so-called 4-point structure) to improve ESD susceptibility
- prehensive package pin-out for immediate implementation
- Method 3015-6
