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USB6B1 Datasheet PDF

STMicroelectronics USB6B1

The USB6B1 protects the two input lines against overvoltage. Relative variation of breakdown voltage versus junction temperature (typical values) VBR[Tj] / VBR[Tj=25°C] 1.10 1.05 1.00 0.95 0.90 -40 -20 Tj(°C) 0 20 40 60 80 100 120 140 3/9 Technical information 2 Technical information USB6B1 2.1 Note: Surge protection The USB6B1 is optimized to perform surge...
Part No. USB6B1
Datasheet USB6B1 Download
Manufacturer
STMicroelectronics
Description Data line protection
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USB6B1 datasheet page 1 preview

APPLICATIONS

Where transient overvoltage protection in sensitive equipment is required, such as:
● Universal Serial Bus ports
● RS-423 interfaces
● RS-485 interfaces
● ISDN equipment
● T1/E1 line cards
● HDSL / ASDL interfaces

FEATURES

● Full diode bridge with integrated clamping protection
● Breakdown voltage: VBR = 6 V min.
● Peak pulse power dissipation: PPP = 500 W (8/20 µs)
● Very low capacitance, compatible with high debit data or signal rates.

DESCRIPTION

In order to prevent fast transients from leading to severe damages in a high speed data system, a specific protection has been developed by STMicroelectronics. Besides, this device also keeps the power rails in a safe limit thanks to the integrated Transil diode. Benefits
● Provides protection for each line and between the supply voltage and GND: 25 A, 8/20 µs.
● High ESD protection level: up to level 3 per MIL STD 883C-Method 3015-6
● Separated inputs and outputs (so-called 4-point structure) to improve ESD susceptibility.
● Comprehensive package pin-out for immediate implementation.
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