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VNB35N07-E - fully autoprotected Power MOSFET

General Description

The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications.

Key Features

  • Type VNP35N07-E VNB35N07-E VNV35N07-E Vclamp 70 V 70 V 70 V RDS(on) 0.028 Ω 0.028 Ω 0.028 Ω Ilim 35 A 35 A 35 A Datasheet - production data.
  • Diagnostic feedback through input pin.
  • ESD protection.
  • Direct access to the gate of the Power MOSFET (analog driving).
  • Compatible with standard Power MOSFET.
  • Standard TO-220 package.
  • Compliant with 2002/95/EC European directive.

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VNP35N07-E, VNB35N07-E, VNV35N07-E OMNIFET: fully autoprotected Power MOSFET 3 2 1 TO-220 3 1 D2PAK 10 1 PowerSO-10 Features Type VNP35N07-E VNB35N07-E VNV35N07-E Vclamp 70 V 70 V 70 V RDS(on) 0.028 Ω 0.028 Ω 0.028 Ω Ilim 35 A 35 A 35 A Datasheet - production data • Diagnostic feedback through input pin • ESD protection • Direct access to the gate of the Power MOSFET (analog driving) • Compatible with standard Power MOSFET • Standard TO-220 package • Compliant with 2002/95/EC European directive Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications.