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VNB35NV04-E Datasheet Fully Autoprotected Power MOSFET

Manufacturer: STMicroelectronics

Overview: VNB35NV04-E, VNP35NV04-E, VNV35NV04-E OMNIFET II: fully autoprotected Power MOSFET 3 1 D2PAK 10 1 PowerSO-10 3 2.

General Description

The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed in STMicroelectronics® VIPower® M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications.

Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.

Fault feedback can be detected by monitoring the voltage at the input pin.

Key Features

  • Type RDS(on) VNB35NV04-E VNP35NV04-E VNV35NV04-E 10 mΩ(1) 1. For PowerSO-10 only Ilim 30 A Vclamp 40 V.
  • Linear current limitation.
  • Thermal shutdown.
  • Short circuit protection.
  • Integrated clamp.
  • Low current drawn from input pin Datasheet - production data.
  • Diagnostic feedback through input pin.
  • ESD protection.
  • Direct access to the gate of the Power MOSFET (analog driving).
  • Compatible with standard Power MOSFE.

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VNB35NV04-E Distributor