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VND1NV04 Datasheet PDF

STMicroelectronics VND1NV04

The VND1NV04, VNN1NV04, VNS1NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power BLOCK DIAGRAM MOSFETS from DC up to 50KHz applications.
Part No. VND1NV04
Datasheet VND1NV04 Download
Manufacturer
STMicroelectronics
Description fully autoprotected Power MOSFET
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VND1NV04 datasheet page 1 preview

DESCRIPTION

Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin. DRAIN 2 Overvoltage Clamp INPUT 1 Gate Control Over Temperature Linear Current Limiter 3 SOURCE FC01000 February 2003 1/18 VND1NV04 / VNN1NV04 / VNS1NV04 ABSOLUTE MAXIMUM RATING Symbol VDS VIN IIN RIN MIN ID IR VESD1 VESD2 Ptot Tj Tc Tstg Parameter Drain-source Voltage (VIN=0V) Input Voltage Input Current Minimum Input Series Impedance Drain Current Reverse DC Output Current Electrostatic Discharge (R=1.5KΩ, C=100pF) Electrostatic Discharge on output pin only (R=330Ω, C=150pF) Total Dissipation at Tc=25°C Operating Junction Temperature Case Operating Temperature Storage Temperature SOT-223 Value SO-8 Internally Clamped Internally Clamped +/-20 330 Internally Limited -3 4000 16500 7 8.3 Internally limited Internally limited -55 to 150 35 DPAK Unit V V mA Ω A A V V W °C °C °C CONNECTION DI...
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