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VNH100N04 - OMNIFET: FULLY AUTOPROTECTED POWER MOSFET

General Description

The VNH100N04 is a monolithic device made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications.

Key Features

  • During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user’s standpoint is that a small DC current (Iiss) flows into the Input pin in order to supply the internal circuitry. The device integrates: www. DataSheet4U. com.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VNH100N04 ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TARGET DATA TYPE VNH100N04 www.DataSheet4U.com s s s s s s V clamp 42 V R DS(on) 0.012 Ω I lim 100 A s s s s LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT PIN ESD PROTECTION DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) COMPATIBLE WITH STANDARD POWER MOSFET STANDARD TO-218 PACKAGE TO-218 DESCRIPTION The VNH100N04 is a monolithic device made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Buit-in thermal shut-down, linear BLOCK DIAGRAM current limitation and overvoltage clamp protect the chip in harsh enviroments.