Datasheet4U.com

VNH100N04 Datasheet PDF

STMicroelectronics VNH100N04

The VNH100N04 is a monolithic device made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications.
Part No. VNH100N04
Datasheet VNH100N04 Download
Manufacturer
STMicroelectronics
Description OMNIFET: FULLY AUTOPROTECTED POWER MOSFET
Buy Stock & Price
VNH100N04 datasheet page 1 preview

DESCRIPTION

Buit-in thermal shut-down, linear BLOCK DIAGRAM current limitation and overvoltage clamp protect the chip in harsh enviroments. Fault feedback can be detected by monitoring the voltage at the input pin. September 1994 1/7 VNH100N04 ABSOLUTE MAXIMUM RATING Symbol VD S V in ID IR V esd P tot j Parameter Drain-source Voltage (V in = 0) Input Voltage Drain Current Reverse DC Output Current Electrostatic Discharge (C= 100 pF, R=1.5 K Ω ) Total Dissipation at Tc = 25 C Operating Junction Temperature Case Operating Temperature Storage Temperature o Value Internally Clamped 18 Internally Limited -50 2000 208 Internally Limited Internally Limited -55 to 150 Unit V V A A V W o o o C C C Tc T stg THERMAL DATA R thj-cas e Rthj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 0.6 30 o o C/W C/W

ELECTRICAL CHARACTERISTICS

(Tcase = 25 oC unless otherwise specified) OFF Symbol V CLAMP V CLTH V I NC L I DS S I ISS Parameter Drain-source Clamp Voltage Drain-s...
VNH100N04 page 2 preview VNH100N04 page 3 preview