Datasheet4U.com

VNK10N06FM Datasheet PDF

STMicroelectronics VNK10N06FM

The VND10N06, VND10N06-1, VNP10N06FI and VNK10N06FM are monolithic devices made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications.
Part No. VNK10N06FM
Datasheet VNK10N06FM Download
Manufacturer
STMicroelectronics
Description FULLY AUTOPROTECTED POWER MOSFET
Buy Stock & Price
VNK10N06FM datasheet page 1 preview

DESCRIPTION

Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments. 3 1 DPAK TO-252 3 2 1 IPAK TO-251 3 2 1 ISOWATT220 SOT82-FM BLOCK DIAGRAM (*) (∗) SOT82-FM Pin Configuration: INPUT = 3; SOURCE = 1; DRAIN = 2. October 1997 1/14 VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM ABSOLUTE MAXIMUM RATING Symbol Parameter VDS Vin Iin ID IR Vesd Ptot Tj Tc Tstg Drain-source Voltage (Vin = 0) Input Voltage Input Current Drain Current Reverse DC Output Current Electrostatic Discharge (C= 100 pF, R=1.5 KΩ) Total Dissipation at Tc = 25 oC Operating Junction Temperature Case Operating Temperature Storage Temperature DPAK IPAK Value ISOWATT220 SOT82-FM Internally Clamped Internally Clamped ± 20 Internally Limited -15 4000 Unit V V mA A A V 35 27 9 W Internally Limited oC Internally Limited oC -55 to 150 oC THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max DPAK/IPAK ISOWATT220 SOT82-FM 3.
VNK10N06FM page 2 preview VNK10N06FM page 3 preview