Datasheet4U Logo Datasheet4U.com

VNL5160N3-E - fully protected low-side driver

Description

The VNL5160N3-E and VNL5160S5-E are monolithic devices, made using STMicroelectronics® VIPower® Technology, intended for driving resistive or inductive loads with one side connected to the battery.

Built-in thermal shutdown protects the chip from overtemperature and short circuit.

Features

  • Type VNL5160N3-E VNL5160S5-E Vclamp 41 V RDS(on) ID 160 mΩ 3.5 A.
  • Drain current:3.5A.
  • ESD protection.
  • Overvoltage clamp.
  • Thermal shutdown.
  • Current and power limitation.
  • Very low standby current.
  • Very low electromagnetic susceptibility.
  • In compliance with the 2002/95/EC European directive.
  • Open drain status output(a).
  • Specially intended for R10W or 2x R5W automotive signal lamps 2 3 2 1 SOT-223 SO-8.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
VNL08C351-INV INVERTER Toshiba

Other Datasheets by STMicroelectronics

Part Number Description
VNL5160S5-E fully protected low-side driver
VNL5030J-E fully protected low-side driver
VNL5030S5-E fully protected low-side driver
VNL5090N3-E fully protected low-side driver
VNL5090S5-E fully protected low-side driver

Full PDF Text Transcription

Click to expand full text
VNL5160N3-E VNL5160S5-E OMNIFET III fully protected low-side driver Features Type VNL5160N3-E VNL5160S5-E Vclamp 41 V RDS(on) ID 160 mΩ 3.5 A ■ Drain current:3.5A ■ ESD protection ■ Overvoltage clamp ■ Thermal shutdown ■ Current and power limitation ■ Very low standby current ■ Very low electromagnetic susceptibility ■ In compliance with the 2002/95/EC European directive ■ Open drain status output(a) ■ Specially intended for R10W or 2x R5W automotive signal lamps 2 3 2 1 SOT-223 SO-8 Description The VNL5160N3-E and VNL5160S5-E are monolithic devices, made using STMicroelectronics® VIPower® Technology, intended for driving resistive or inductive loads with one side connected to the battery. Built-in thermal shutdown protects the chip from overtemperature and short circuit.
Published: |