DESCRIPTION
) Built-in ro thermal shut-down, linear current limitation and P overvoltage clamp protect the chip in harsh Obsolete BLOCK DIAGRAM (∗) ISOWATT220 3 2 1 3 1 D2PAK TO-263 10 1 PowerSO-10 enviroments. Fault feedback can be detected by monitoring the voltage at the input pin. (∗) PowerSO-10 Pin Configuration : INPUT = 6,7,8,9,10; SOURCE = 1,2,4,5; DRAIN = TAB September 2013 DocID1645 Rev 4 1/13 VNP28N04FI-VNB28N04-VNV28N04 ABSOLUTE MAXIMUM RATING Symbol P ar ame t er Value Unit Po werS O-10 D2PAK ISOW AT T22 0 VDS Drain-source Voltage (Vin = 0) Internally Clamped V Vin Input Voltage 18 V ID Drain Current Internally Limited A IR Reverse DC Output Current -28 A Vesd Electrostatic Discharge (C= 100 pF , R=1.5 KΩ) 2000 V Pto t Total Dissipat ion at Tc = 25 oC ) Tj Operating Junction T emperature t(s Tc Case Operating Temperature c Tst g Storage Temperature 83 34 W Internally Limited oC Internally Limited oC -55 to 150 oC rodu THERMAL DATA te P Rthj-case Thermal Resistance Junction-case le Rthj-amb Thermal Resistance Junction-ambient ISOWATT220 PowerSO-10 Max 3.
STMicroelectronics
