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VNP35N07 Datasheet PDF

STMicroelectronics VNP35N07

The VNP35N07 is a monolithic device made ) using STMicroelectronics VIPower Technology, t(s intended for replacement of standard power c MOSFETS in DC to 50 KHz applications.
Part No. VNP35N07
Datasheet VNP35N07 Download
Manufacturer
STMicroelectronics
Description FULLY AUTOPROTECTED POWER MOSFET
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VNP35N07 datasheet page 1 preview

DESCRIPTION

- u Built-in thermal shut-down, linear current limiObsolete Prod BLOCK DIAGRAM 3 2 1 TO-220 tation and overvoltage clamp protect the chip in harsh enviroments. Fault feedback can be detected by monitoring the voltage at the input pin. March 2004 1/11 VNP35N07 ABSOLUTE MAXIMUM RATING Symbol Parameter Value Unit VDS Drain-source Voltage (Vin = 0) Internally Clamped V Vin Input Voltage 18 V ID Drain Current Internally Limited A IR Reverse DC Output Current -50 A Vesd Electrostatic Discharge (C= 100 pF, R=1.5 KΩ) 2000 V Ptot Total Dissipation at Tc = 25 oC 125 W Tj Operating Junction Temperature Internally Limited oC Tc Case Operating Temperature ) Tstg Storage Temperature Internally Limited oC -55 to 150 oC ct(s THERMAL DATA du Rthj-case Thermal Resistance Junction-case ro Rthj-amb Thermal Resistance Junction-ambient Max Max 1 62.5 oC/W oC/W te P

ELECTRICAL CHARACTERISTICS

(Tcase = 25 oC unless otherwise specified) le OFF so Symbol b VCLAMP - O VCLTH t(s) VINCL uc IDSS Prod II...
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