VNP35NV04-E - fully autoprotected Power MOSFET

Description

The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed in STMicroelectronics® VIPower® M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications.

Features

Type RDS(on) VNB35NV04-E VNP35NV04-E VNV35NV04-E 10 mΩ(1) 1. For PowerSO-10 only Ilim 30 A Vclamp 40 V.
Linear current limitation.
Thermal shutdown.
Short circuit protection.
Integrated clamp.
Low current drawn from input pin Datasheet - production data.
Diagnostic feedback through input pin.
ESD protection.
Direct access to the gate of the Power MOSFET (analog driving).
Compatible with standard Power MOSFE.

STMicroelectronics

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Datasheet Details

Part number	VNP35NV04-E
Manufacturer	STMicroelectronics
File Size	410.25 KB
Description	fully autoprotected Power MOSFET
Datasheet	VNP35NV04-E Datasheet
Additional preview pages of the VNP35NV04-E datasheet.

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Full PDF Text Transcription

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VNB35NV04-E, VNP35NV04-E, VNV35NV04-E OMNIFET II: fully autoprotected Power MOSFET 3 1 D2PAK 10 1 PowerSO-10 3 2 1 TO-220 Features Type RDS(on) VNB35NV04-E VNP35NV04-E VNV35NV04-E 10 mΩ(1) 1. For PowerSO-10 only Ilim 30 A Vclamp 40 V • Linear current limitation • Thermal shutdown • Short circuit protection • Integrated clamp • Low current drawn from input pin Datasheet - production data • Diagnostic feedback through input pin • ESD protection • Direct access to the gate of the Power MOSFET (analog driving) • Compatible with standard Power MOSFET Description The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed in STMicroelectronics® VIPower® M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications.

Published: Oct 21, 2016 |