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VNS14NV04P-E - fully autoprotected Power MOSFET

General Description

The VNS14NV04P-E is monolithic device made using STMicroelectronics™ VIPower™ M0 Technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications.

Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.

Key Features

  • Type VNS14NV04P-E RDS(on) 35 mΩ Ilim 12 A Vclamp 40 V.
  • Linear current limitation.
  • Thermal shutdown.
  • Short circuit protection.
  • Integrated clamp.
  • Low current drawn from input pin.
  • Diagnostic feedback through input pin.
  • ESD protection.
  • Direct access to the gate of the Power MOSFET (analog driving).
  • Compatible with standard Power MOSFET.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VNS14NV04P-E "OMNIFET II" fully autoprotected Power MOSFET Features Type VNS14NV04P-E RDS(on) 35 mΩ Ilim 12 A Vclamp 40 V ■ Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard Power MOSFET Description The VNS14NV04P-E is monolithic device made using STMicroelectronics™ VIPower™ M0 Technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.