Datasheet4U.com

VNW50N04 Datasheet PDF

STMicroelectronics VNW50N04

The VNW50N04 is a monolithic device made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications.
Part No. VNW50N04
Datasheet VNW50N04 Download
Manufacturer
STMicroelectronics
Description FULLY AUTOPROTECTED POWER MOSFET
Buy Stock & Price
VNW50N04 datasheet page 1 preview

DESCRIPTION

Built-in thermal shut-down, linear BLOCK DIAGRAM 3 2 1 TO-247 current limitation and overvoltage clamp protect the chip in harsh enviroments. Fault feedback can be detected by monitoring the voltage at the input pin. August 1996 1/11 VNW50N04 ABSOLUTE MAXIMUM RATING Symbol Parameter VDS Drain-source Voltage (Vin = 0) Vin Input Voltage ID Drain Current IR Reverse DC Output Current Vesd Ptot Electrostatic Discharge (C= 100 pF, R=1.5 KΩ) Total Dissipation at Tc = 25 oC Tj Operating Junction Temperature Tc Case Operating Temperature Tstg Storage Temperature Value Internally Clamped 18 Internally Limited -100 2000 208 Internally Limited Internally Limited -55 to 150 Unit V V A A V W oC oC oC THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient Max 0.6 Max 30 oC/W oC/W

ELECTRICAL CHARACTERISTICS

(Tcase = 25 oC unless otherwise specified) OFF Symbol VCLAMP VCLTH VINCL IDSS IISS Parameter Drain-source Clamp Voltage Drain-source Clamp...
VNW50N04 page 2 preview VNW50N04 page 3 preview