W16NB60 - STW16NB60

Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.

STMicroelectronics

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Datasheet Details

Part number	W16NB60
Manufacturer	STMicroelectronics
File Size	205.96 KB
Description	STW16NB60
Datasheet	W16NB60 Datasheet
Additional preview pages of the W16NB60 datasheet.

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www.DataSheet4U.com STW16NB60 N-CHANNEL 600V - 0.3Ω - 16A TO-247 PowerMesh™ MOSFET TYPE STW16NB60 s s s s s VDSS 600V RDS(on) < 0.35 Ω ID 16 A TYPICAL RDS(on) = 0.3Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 1 3 2 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

Published: Mar 6, 2009 |