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W21NM60N - STW21NM60N

Datasheet Summary

Description

This series of devices implements the second generation of MDmesh™ Technology.

This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Features

  • Type STB21NM60N STB21NM60N-1 STF21NM60N STP21NM60N STW21NM60N VDSS (@Tjmax) 650V 650V 650V 650V 650V RDS(on) < 0.22Ω < 0.22Ω < 0.22Ω < 0.22Ω < 0.22Ω ID 3 3 1 2 3 1 2 1 17A 17A 17A(1) 17A 17A TO-220 D2PAK TO-220FP 1. Limited by wire bonding.
  • 3 12 100% avalanche tested Low input capacitance and gate charge Low gate input resistance I2PAK TO-247.

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Datasheet Details

Part number W21NM60N
Manufacturer STMicroelectronics
File Size 702.67 KB
Description STW21NM60N
Datasheet download datasheet W21NM60N Datasheet
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    www.DataSheet.co.kr STP/F21NM60N-STW21NM60N STB21NM60N-STB21NM60N-1 N-channel 600V - 0.17Ω - 17A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh™ Power MOSFET Features Type STB21NM60N STB21NM60N-1 STF21NM60N STP21NM60N STW21NM60N VDSS (@Tjmax) 650V 650V 650V 650V 650V RDS(on) < 0.22Ω < 0.22Ω < 0.22Ω < 0.22Ω < 0.22Ω ID 3 3 1 2 3 1 2 1 17A 17A 17A(1) 17A 17A TO-220 D2PAK TO-220FP 1. Limited by wire bonding ■ ■ ■ 3 12 100% avalanche tested Low input capacitance and gate charge Low gate input resistance I2PAK TO-247 Description This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
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