W21NM60N Datasheet | STMicroelectronics

.Data Sheet.co.kr STP/F21NM60N-STW21NM60N STB21NM60N-STB21NM60N-1 N-channel 600V - 0.17Ω - 17A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh™ Power MOSFET Features Type STB21NM60N STB21NM60N-1 STF21NM60N STP21NM60N STW21NM60N VDSS (@Tjmax) 650V 650V 650V 650V 650V RDS(on) < 0.22Ω < 0.22Ω < 0.22Ω < 0.22Ω < 0.22Ω ID 1 2 3 1 2 17A 17A 17A(1) 17A 17A TO-220 D2PAK TO-220FP 1. Limited by wire bonding - - - 3 12 100% avalanche tested Low input capacitance and gate charge Low gate input resistance I2PAK TO-247 Description This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters Internal schematic diagram Applications - Switching application Order codes Part number STB21NM60N STB21NM60N-1 STF21NM60N STP21NM60N STW21NM60N Marking B21NM60N B21NM60N F21NM60N P21NM60N W21NM60N Package D I 2PAK 2PAK Packaging Tape & reel Tube Tube Tube Tube TO-220FP TO-220 TO-247 April...