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W30NM60D - N-channel Power MOSFET

General Description

intrinsic fast-recovery body diode.

te strongly recommended for bridge topologies, in le particular ZVS phase-shift converters.

Switching application TO-247 Int

Key Features

  • Type VDSS RDS(on) ID STW30NM60D 600V < 0.145Ω 30A.
  • High dv/dt and avalanche capabilities.
  • 100% avalanche rated.
  • Low input capacitance and gate charge.
  • Low gate input resistance t(s).
  • Fast internal recovery diode uc.

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STW30NM60D N-channel 600V - 0.125Ω - 30A - TO-247 Fast diode MDmesh™ Power MOSFET General features Type VDSS RDS(on) ID STW30NM60D 600V < 0.145Ω 30A ■ High dv/dt and avalanche capabilities ■ 100% avalanche rated ■ Low input capacitance and gate charge ■ Low gate input resistance t(s) ■ Fast internal recovery diode uc Description rod The FDmesh™ associates all advantages of P reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore te strongly recommended for bridge topologies, in le particular ZVS phase-shift converters. bso Applications - O ■ Switching application TO-247 Internal schematic diagram lete Product(s) Order codes bsoPart number O STW30NM60D Marking W30NM60D Package TO-247 Packaging Tube July 2006 Rev 5 1/12 www.st.