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W45NM50 - STW45NM50

General Description

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout.

The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics.

Key Features

  • TYPE STW45NM50 s s s s Figure 1: Package RDS(on) < 0.1Ω ID 45 A VDSS (@Tjmax) 550V s s.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STW45NM50 N-CHANNEL 550V @ Tjmax - 0.08Ω - 45A TO-247 MDmesh™ MOSFET Table 1: General Features TYPE STW45NM50 s s s s Figure 1: Package RDS(on) < 0.1Ω ID 45 A VDSS (@Tjmax) 550V s s TYPICAL RDS(on) = 0.08Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS 3 2 1 TO-247 DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics.