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W54NK30Z - N-Channel MOSFET

General Description

u The SuperMESH™ series is obtained through an d extreme optimization of ST’s well established ro strip-based PowerMESH™ layout.

te for the most demanding applications.

Key Features

  • Figure 1: Package TYPE BVDSS RDS(on) ID Pw STW54NK30Z 300 V < 0.060 Ω 54 A 300 W s.

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STW54NK30Z N-CHANNEL 300V - 0.052Ω - 54A TO-247 Zener-Protected SuperMESH™ MOSFET Table 1: General Features Figure 1: Package TYPE BVDSS RDS(on) ID Pw STW54NK30Z 300 V < 0.060 Ω 54 A 300 W s TYPICAL RDS(on) = 0.052 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s GATE CHARGE MINIMIZED s VERY LOW INTRINSIC CAPACITANCES s VERY GOOD MANUFACTURING ) REPEATIBILITY ct(s DESCRIPTION u The SuperMESH™ series is obtained through an d extreme optimization of ST’s well established ro strip-based PowerMESH™ layout. In addition to P pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability te for the most demanding applications.