W60N10
W60N10 is STW60N10 manufactured by STMicroelectronics.
STH60N10/FI STW60N10
- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE STH60N10 STH60N10FI .. STW60N10 s s s s s s s s
V DSS 100 V 100 V 100 V
R DS( on) < 0.025 Ω < 0.025 Ω < 0.025 Ω
ID 60 A 36 A 60 A
TO-247
TYPICAL RDS(on) = 0.02 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100o C LOW GATE CHARGE VERY HIGH CURRENT CAPABILITY 175o C OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION
3 2 1
3 2
3 2
TO-218
ISOWATT218
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) s
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value STH/STW60N10 VD S V DG R V GS ID ID ID M(
- ) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o
Unit STH60N10FI V V V 36 22 240 70 0.56 4000 -65 to 150 150 A A A W W/o C V o o
100 100 ± 20 60 42 240 200 1.33 -65 to 175 175
(- ) Pulse width limited by safe operating area
May 1993
1/11
STH60N10/FI STW60N10
THERMAL DATA
TO-218/TO-247 ISOWATT218 R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Max 0.75 30 0.1 300 1.79 o o o
C/W C/W C/W o C
Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol
..
Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR, VD D = 25 V) Repetitive Avalanche Energy (pulse width limited by T j max, δ < 1%) Avalanche Current, Repetitive...
