W8NC90Z Datasheet | STMicroelectronics

STW8NC90Z N-CHANNEL 900V - 1.1 Ω - 7.6A TO-247 Zener-Protected PowerMESH™III MOSFET TYPE VDSS RDS(on) STW8NC90Z 900 V < 1.38 Ω 7.6 A s TYPICAL RDS(on) = 1.1 Ω s EXTREMELY HIGH dv/dt CAPABILITY GATE- TO-SOURCE ZENER DIODES s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. APPLICATIONS s SINGLE-ENDED SMPS IN...