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® STW9NB90
N-CHANNEL 900V - 0.85Ω - 9.7A - TO-247 PowerMESH™ MOSFET
TYPE
V DSS
RDS(on)
ID
S TW 9NB9 0
900 V
<1Ω
9.7 A
s TYPICAL RDS(on) = 0.85 Ω s EXTREMELY HIGH dv/dt CAPABILITY s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED
DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
W9NB90 Datasheet
