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WS57C128FB - HIGH SPEED 16K x 8 CMOS EPROM

General Description

The WS57C128FB is a High Performance 128K UV Erasable Electrically Programmable Read Only Memory.

It is manufactured with an advanced CMOS technology which enables it to operate at Bipolar speeds while consuming only 90 mA.

Key Features

  • Very Fast Access Time.
  • 35 ns.
  • Standard EPROM Pinout.
  • DIP and Surface Mount Packaging Available.
  • Low Power Consumption.
  • EPI Processing.
  • Latch-up Immunity Up to 200 mA.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WS57C128FB HIGH SPEED 16K x 8 CMOS EPROM KEY FEATURES • Very Fast Access Time — 35 ns • Standard EPROM Pinout • DIP and Surface Mount Packaging Available • Low Power Consumption • EPI Processing — Latch-up Immunity Up to 200 mA GENERAL DESCRIPTION The WS57C128FB is a High Performance 128K UV Erasable Electrically Programmable Read Only Memory. It is manufactured with an advanced CMOS technology which enables it to operate at Bipolar speeds while consuming only 90 mA. Two major features of the WS57C128FB are its Low Power and High Speed. These features make it an ideal solution for applications which require fast access times, low power, and non-volatility. Typical applications include systems which do not utilize mass storage devices and/or are board space limited.