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WS57C256F - MILITARY HIGH SPEED 32K x 8 CMOS EPROM

General Description

The WS57C256F is a High Performance 32K x 8 UV Erasable EPROM.

It is manufactured using an advanced CMOS process technology enabling it to operate at speeds as fast as 35 ns Address Access Time (tACC) and 35 ns Chip Enable Time (t CE).

Key Features

  • Immune to Latch-UP.
  • Up to 200 mA.
  • Low Power Consumption.
  • 200 µA Standby ICC.
  • ESD Protection Exceeds 2000 Volts.
  • Available in 300 Mil DIP and PLDCC.
  • DESC SMD No. 5962-86063.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WS57C256F HIGH SPEED 32K x 8 CMOS EPROM • Fast Access Time — t ACC = 35 ns — t CE = 35 ns KEY FEATURES • Immune to Latch-UP — Up to 200 mA • Low Power Consumption — 200 µA Standby ICC • ESD Protection Exceeds 2000 Volts • Available in 300 Mil DIP and PLDCC • DESC SMD No. 5962-86063 GENERAL DESCRIPTION The WS57C256F is a High Performance 32K x 8 UV Erasable EPROM. It is manufactured using an advanced CMOS process technology enabling it to operate at speeds as fast as 35 ns Address Access Time (tACC) and 35 ns Chip Enable Time (t CE). It was designed utilizing WSI's patented self-aligned split gate EPROM cell, resulting in a low power device with a very cost effective die size.