STMicroelectronics WS57LV291C
The WS57LV291C is a High Performance 2K x 8 UV Erasable Re-Programmable Read Only Memory (RPROM). This RPROM is manufactured using an advanced CMOS EPROM manufacturing process resulting in a very low power die that affords exceptional speed capabilities with a 3.3 volt V CC supply. The WS57LV291C is configured in the standard Bipolar PROM pinouts, the preferred and most common pinout for high speed PROMs of 16K density.FEATURES
● 3.3 Volt ± 0.3 Volt VCC● Fast Access Time — t ACC = 70 ns — t CS = 20 ns
● Available in 300 Mil "Skinny" DIP
● Immune to Latch-up — Up to 200 mA
● ESD Protection Exceeds 2000V
● Low Power Consumption — ≤ 25 mA ICC
GENERAL DESCRIPTION
Operating at 3.3 volts, the WS57LV291C dissipates a maximum of 25 mA under worst case conditions at maximum speed (70 ns TAA). Typical ICC at 25°C is less than 20 milliamps. The WS57LV291C is packaged in a space saving 300 mil windowed, hermetic DIP package. BLOCK DIAGRAM PIN CONFIGURATION TOP VIEW CERDIP A7 A6 A5 A4 A3 A2 A1 A0 O0 O1 O2 GND 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 VCC A8 A9 A10 CS1/VPP CS2 CS3 O7 O6 O5 O4 O3 6 A5 - A10 ROW ADDRESSES ROW DECODER EPROM ARRAY 16,384 BITS 5 A0 - A4 COLUMN ADDRESSES COLUMN DECODER SENSE AMPLIFIERS CS1/ VPP CS2 CS3 8 OUTPUTS PRODUCT SELECTION GUIDE PARAMETER Address Access Time (Max) CS to Output Valid Time (Max) WS57LV291C-70 70 ns 20 ns WS57LV291C-90 90 ns 30 ns Return to Mai...