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WS57LV291C - HIGH SPEED 3.3 VOLT 2K x 8 CMOS PROM/RPROM

Description

The WS57LV291C is a High Performance 2K x 8 UV Erasable Re-Programmable Read Only Memory (RPROM).

This RPROM is manufactured using an advanced CMOS EPROM manufacturing process resulting in a very low power die that affords exceptional speed capabilities with a 3.3 volt V CC supply.

Features

  • 3.3 Volt ± 0.3 Volt VCC.
  • Fast Access Time.
  • t ACC = 70 ns.
  • t CS = 20 ns.
  • Available in 300 Mil "Skinny" DIP.
  • Immune to Latch-up.
  • Up to 200 mA.
  • ESD Protection Exceeds 2000V.
  • Low Power Consumption.
  • ≤ 25 mA ICC.

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Full PDF Text Transcription

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WS57LV291C PRELIMINARY HIGH SPEED 3.3 VOLT 2K x 8 CMOS PROM/RPROM KEY FEATURES • 3.3 Volt ± 0.3 Volt VCC • Fast Access Time — t ACC = 70 ns — t CS = 20 ns • Available in 300 Mil "Skinny" DIP • Immune to Latch-up — Up to 200 mA • ESD Protection Exceeds 2000V • Low Power Consumption — ≤ 25 mA ICC GENERAL DESCRIPTION The WS57LV291C is a High Performance 2K x 8 UV Erasable Re-Programmable Read Only Memory (RPROM). This RPROM is manufactured using an advanced CMOS EPROM manufacturing process resulting in a very low power die that affords exceptional speed capabilities with a 3.3 volt V CC supply. The WS57LV291C is configured in the standard Bipolar PROM pinouts, the preferred and most common pinout for high speed PROMs of 16K density. Operating at 3.
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