STMicroelectronics XSD57030-01
The SD57030-01 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57030-01 is designed for high gain and broadband performance operating in common source mode at 28V.| Part No. | XSD57030-01 |
|---|---|
| Datasheet | XSD57030-01 Download |
| Manufacturer |  STMicroelectronics |
| Description | RF POWER TRANSISTORS The LdmoSTFAMILY |
| Buy | Stock & Price |
DESCRIPTION
It is ideal for base stations applications requiring high linearity. M250 epoxy sealed ORDER CODE BRANDING SD57030-01 XSD57030-01 PIN CONNECTION 1. Drain 2. Gate 3.SourceABSOLUTE MAXIMUM RATINGS
(Tcase = 25 oC) Symbol V (BR)DSS V GS ID P DI SS Tj T STG Parameter Drain Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc= 70 C) Max. O perating Junction Temperature Storage T emperature o Value 65 ± 20 4 74 200 -65 to 150 Uni t V V A W o o C C THERMAL DATA R th (j-c) Junction-Case Thermal Resistance 1.75 o C/W January 2000 1/7 SD57030-01 ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC Symb ol V (BR)DSS I DSS I GSS V GS(Q) V DS( ON) g FS C ISS C OSS C RSS V GS = 0V V GS = 0V V GS = 20V V DS = 28V V GS = 10V V DS = 10V V GS = 0V V GS = 0V V GS = 0V Parameter I DS = 10 mA V DS = 28 V VDS = 0 V ID = 50 mA ID = 3 A ID = 3 A VDS = 28 V VDS = 28 V VDS = 28 V f = 1 MHz f = 1 MHz f = 1 MHz 2.0 1.3 1.8 58 34 2.4 Min. 65 1 1 5.0 Typ . Max. Un it V µA µA V V mho pF pF...
