STMicroelectronics XSD57120
The SD57120 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57120 is designed for high gain and broadband performance operating in common source mode at 28V.| Part No. | XSD57120 |
|---|---|
| Datasheet | XSD57120 Download |
| Manufacturer |  STMicroelectronics |
| Description | RF POWER TRANSISTORS The LdmoSTFAMILY |
| Buy | Stock & Price |
DESCRIPTION
Its internal matching makes it ideal for base station applications requiring high linearity. M252 epoxy sealed ORDER CODE BRANDING SD57120 XSD57120 PIN CONNECTION 1. Drain 2. Drain 3. SourceABSOLUTE MAXIMUM RATINGS
(Tcase = 25 oC) Symbol V (BR)DSS V GS ID P DI SS Tj T STG Parameter Drain Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ T c= 70 o C) Max. O perating Junction Temperature Storage Temperature Value 65 ± 20 14 236 200 -65 to 150 4. Gate 5. Gate Uni t V V A W o o C C THERMAL DATA R th (j-c) Junction-Case Thermal Resistance 0.55 o C/W March 2000 1/7 SD57120 ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC (Per Section) Symb ol V (BR)DSS I DSS I GSS V GS(Q) V DS( ON) G FS C I SS * C OSS C RSS V GS = 0V V GS = 0V V GS = 20V V DS = 28V V GS = 10V V DS = 10V V GS = 0V V GS = 0V V GS = 0V Parameter I DS = 10 mA V DS = 28 V V DS = 0 V I D = 100 mA ID = 3 A ID = 3 A V DS = 28 V V DS = 28 V V DS = 28 V f = 1 MHz f = 1 MHz f = 1 MHz 3.0 0.7 3 175 44 1.7 Min.
