XSD57120 Datasheet | STMicroelectronics

® SD57120 RF POWER TRANSISTORS The LdmoST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY MON SOURCE CONFIGURATION, PUSH-PULL POUT = 120 W with 13 dB gain @ 960 MHz BeO FREE PACKAGE INTERNAL INPUT MATCHING ν ν ν ν ν DESCRIPTION The SD57120 is a mon source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband mercial and industrial applications at frequencies up to 1.0 GHz. The SD57120 is designed for high gain and broadband performance operating in mon source mode at 28V. Its internal matching makes it ideal for base station applications requiring high linearity. M252 epoxy sealed ORDER...