Datasheet4U Logo Datasheet4U.com

Y60NM50 - STY60NM50

General Description

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout.

The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
Y60NM60 N-Channel MOSFET VBsemi
Y60KPE PHASE CONTROL THYRISTOR TECHSEM

Other Datasheets by STMicroelectronics

Part Number Description
Y60NM60 STY60NM60
Y60NK30Z STY60NK30Z

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N-CHANNEL 500V - 0.045Ω - 60A Max247 Zener-Protected MDmesh™Power MOSFET TYPE STY60NM50 n n n n n n n STY60NM50 VDSS 500V RDS(on) < 0.05Ω ID 60 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL INDUSTRY’S LOWEST ON-RESISTANCE 2 1 3 Max247 DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics.