DESCRIPTION
Different gate current sensitivities are available, allowing optimized performances when controlled directly from microcontrollers. A1 A2 G TO202-3 Order codes Part Number Z04xxyF(1) 1. xx = sensitivity, y = voltage Marking Z04xxyF(1) Table 1. Absolute maximum ratings Symbol Parameter IT(RMS) ITSM I²t dI/dt IGM PG(AV) Tstg Tj RMS on-state current (full sine wave) Non repetitive surge peak on-state current F = 50 Hz (full cycle, Tj initial = 25° C) F = 60 Hz I²t Value for fusing tp = 10 ms Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 120 Hz Peak gate current tp = 20 µs Average gate power dissipation Storage junction temperature range Operating junction temperature range Tamb = 25° C Tl = 30° C t = 20 ms t = 16.7 ms Tj = 125° C Tj = 125° C Tj = 125° C Value Unit 4 A 20 21 2.2 20 1.2 0.2 - 40 to + 150 - 40 to + 125 A A²s A/µs A W °C May 2006 Rev 7 1/8 8 Characteristics Z04 1 Characteristics Table 2. ELECTRICAL CHARACTERISTICS
(Tj = 25° C, unless otherwise specified) Symbol Test Conditions Quadrant Z04 Unit 02 05 09 10 IGT (1) VGT VD = 12 V RL = 30 Ω I - II - III - IV MAX .
STMicroelectronics
