FEATURES
: A2 Symbol IT(RMS) VDRM/VRRM IGT (Q1) Value 4 600 to 800 3 to 25 Unit A V mA G A1 DESCRIPTION
Different gate current sensitivities are available, allowing optimized performances when controlled directly from microcontrollers. A1 A2 G TO202-3 (Z04xxF) ABSOLUTE MAXIMUM RATINGS
Symbol IT(RMS) Parameter RMS on-state current (full sine wave) TI = 30°C Tamb = 25°C ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) I²t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range F = 50 Hz F = 60 Hz t = 20 ms t = 16.7 ms Value 4 1 20 21 2.2 Tj = 125°C Tj = 125°C Tj = 125°C 20 1.2 0.2 - 40 to + 150 - 40 to + 125 A² s A/µs A W °C A Unit A I ²t dI/dt IGM PG(AV) Tstg Tj tp = 10 ms F = 120 Hz tp = 20 µs July 2003 - Ed: 5 1/6 Z04 Series ELECTRICAL CHARACTERISTICS
(Tj = 25°C, unless otherwise specified) Symbol Test Conditions Quadrant 02 IGT (1) VGT VGD IH (2) IL Z04xx 05 5 1.3 0.2 3 6 12 MIN.
STMicroelectronics
