EGNB180M1A
Description
SEDI's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation, and gives you higher gain. This device target applications are low current and wide band applications for high voltage.
Key Features
- High Voltage Operation : VDS=50V
- High Power : 53.5dBm (typ.) @ P3dB
- High Efficiency: 65%(typ.) @ P3dB
- Linear Gain : 17.5dB(typ.) @ f=0.9GHz
- Proven Reliability EGNB180M1A High Voltage
- High Power GaN-HEMT
