EGNB180M1A Overview
SEDI's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation, and gives you higher gain. This device target applications are low current and wide band applications for high voltage. Pinch-Off Voltage Vp VDS=50V IDS=72mA -1.0 3dB Gain pression Power P3dB VDS=50V 52.5 Drain Efficiency ηd IDS(DC)=1000mA - Linear Gain GL f=0.9GHz...
EGNB180M1A Key Features
- High Voltage Operation : VDS=50V -High Power : 53.5dBm (typ.) @ P3dB -High Efficiency: 65%(typ.) @ P3dB -Linear Gain : 1
- High Power GaN-HEMT