• Part: EGNB180M1A
  • Description: High Power GaN-HEMT
  • Manufacturer: SUMITOMO
  • Size: 153.86 KB
Download EGNB180M1A Datasheet PDF
EGNB180M1A page 2
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Datasheet Summary

Features - High Voltage Operation : VDS=50V - High Power : 53.5dBm (typ.) @ P3dB - High Efficiency: 65%(typ.) @ P3dB - Linear Gain : 17.5dB(typ.) @ f=0.9GHz - Proven Reliability High Voltage - High Power GaN-HEMT DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation, and gives you higher gain. This device target applications are low current and wide band applications for high...