ELM1414-30F-001 Overview
Key Specifications
Description
The ELM1414-30F/001 is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50ohm system. Item Drain-Source Voltage (Tc=25deg.C Gate-Source Voltage (Tc=25deg.C Total Pow er Dissipation Storage Tem perature Channel Tem perature Symbol V DS V GS PT Tstg Tch Rating 15 -5 115.3 -55 to +125 175 Unit V V W deg.C deg.C RECOMMENDED OPERATING CONDITION Item DC Input Voltage Forw ard Gate Current Reverse Gate Current Storage Tem perature Channel Tem perature Sym bol V DS IGF IGR Tstg Tch Condition RG=24 ohm RG=24 ohm -55 to +125 ≤+155 Lim it ≤10 ≤78.0 ≥-16.9 Unit V mA mA deg.C deg.C Item Drain Current Trans conductance Pinch-off Voltage Gate-Source Breakdow n Voltage Output Pow er at 1dB G.C.P.
Key Features
- High Output Power: P1dB=44.5dBm(Typ.)
- High Gain: G1dB=6.0dB(Typ.)
- High PAE: ηadd=22%(Typ.)
- Broad Band: 14.00 to14.5GHz
- Impedance Matched Zin/Zout = 50ohm
