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ELM5964-10F - C-Band Internally Matched FET

General Description

The ELM5964-10F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50W system.

Key Features

  • High Output Power: P1dB=40.5dBm(Typ. ) High Gain: G1dB=10.0dB(Typ. ) High PAE: hadd=39%(Typ. ) Broad Band: 5.9～6.4GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package.

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Datasheet Details

Part number ELM5964-10F
Manufacturer SUMITOMO
File Size 356.88 KB
Description C-Band Internally Matched FET
Datasheet download datasheet ELM5964-10F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ELM5964-10F C-Band Internally Matched FET FEATURES High Output Power: P1dB=40.5dBm(Typ.) High Gain: G1dB=10.0dB(Typ.) High PAE: hadd=39%(Typ.) Broad Band: 5.9～6.4GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package DESCRIPTION The ELM5964-10F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50W system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 o C) Item Drain-Source Voltage Gate-Source Voltage Total Pow er Dissipation Storage Tem perature Channel Tem perature Symbol V DS V GS PT Tstg Tch Rating 15 -5 42.