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ELM7785-35F - C-Band Internally Matched FET

Description

The ELM7785-35F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50ohm system.

Features

  • High Output Power: P1dB=45.5dBm(Typ. ).
  • High Gain: G1dB=8.0dB(Typ. ).
  • High PAE: ηadd=35%(Typ. ).
  • Broad Band: 7.7 to 8.5GHz.
  • Impedance Matched Zin/Zout = 50ohm.
  • Hermetically Sealed Package.

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Datasheet preview – ELM7785-35F

Datasheet Details

Part number ELM7785-35F
Manufacturer SUMITOMO
File Size 353.21 KB
Description C-Band Internally Matched FET
Datasheet download datasheet ELM7785-35F Datasheet
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ELM7785-35F C-Band Internally Matched FET FEATURES •High Output Power: P1dB=45.5dBm(Typ.) •High Gain: G1dB=8.0dB(Typ.) •High PAE: ηadd=35%(Typ.) •Broad Band: 7.7 to 8.5GHz •Impedance Matched Zin/Zout = 50ohm •Hermetically Sealed Package DESCRIPTION The ELM7785-35F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50ohm system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25deg.C) Item Drain-Source Voltage Gate-Source Voltage Total Pow er Dissipation Storage Tem perature Channel Tem perature Symbol V DS V GS PT Tstg Tch Rating 15 -5 115 -55 to +175 175 Unit V V W deg.C deg.C RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25deg.
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