The FLM0910-12F is a power GaAs FET that is internally matched for standard communication and radar bands to provide optimum power and gain in a 50Ω system.
Key Features
High Output Power: P1dB=40.5dBm(Typ. ) High Gain: G1dB=7.0dB(Typ. ) High PAE: ηadd=25%(Typ. ) Broad Band: 9.5~10.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package.
Full PDF Text Transcription for FLM0910-12F (Reference)
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FLM0910-12F. For precise diagrams, and layout, please refer to the original PDF.
FLM0910-12F X-Band Internally Matched FET FEATURES High Output Power: P1dB=40.5dBm(Typ.) High Gain: G1dB=7.0dB(Typ.) High PAE: ηadd=25%(Typ.) Broad Band: 9.5~10.5GHz Impe...
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G1dB=7.0dB(Typ.) High PAE: ηadd=25%(Typ.) Broad Band: 9.5~10.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package DESCRIPTION The FLM0910-12F is a power GaAs FET that is internally matched for standard communication and radar bands to provide optimum power and gain in a 50Ω system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PTot Tstg Tch Rating 15 -5 57.
FLM0910-12F Datasheet
