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FLM0910-15F - X-Band Internally Matched FET

General Description

The FLM0910-15F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system.

Key Features

  • E High Output Power: P1dB=42.0dBm(Typ. ).
  • E High Gain: G1dB=7.5dB(Typ. ).
  • E High PAE: ηadd=32%(Typ. ).
  • E Broad Band: 9.5~10.5GHz.
  • E Impedance Matched Zin/Zout = 50Ω Hermetically Ε Sealed Package.

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Datasheet Details

Part number FLM0910-15F
Manufacturer SUMITOMO
File Size 106.99 KB
Description X-Band Internally Matched FET
Datasheet download datasheet FLM0910-15F Datasheet

Full PDF Text Transcription for FLM0910-15F (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FLM0910-15F. For precise diagrams, and layout, please refer to the original PDF.

FLM0910-15F X-Band Internally Matched FET FEATURES •E High Output Power: P1dB=42.0dBm(Typ.) •E High Gain: G1dB=7.5dB(Typ.) •E High PAE: ηadd=32%(Typ.) •E Broad Band: 9.5~...

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Gain: G1dB=7.5dB(Typ.) •E High PAE: ηadd=32%(Typ.) •E Broad Band: 9.5~10.5GHz •E Impedance Matched Zin/Zout = 50Ω Hermetically Ε Sealed Package DESCRIPTION The FLM0910-15F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 o C) Ite m Drain-Source Voltage Gate-Source Voltage Total Pow e r Dissipation Storage Temperature Channe l Te m perature Symbol V DS V GS PT Tstg Tch Rating 15 -5 57.

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