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FLM0910-3F - X / Ku-Band Internally Matched FET

General Description

The FLM0910-3F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.

Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance.

Key Features

  • High Output Power: P1dB = 35.0dBm (Typ. ) High Gain: G1dB = 7.5dB (Typ. ) High PAE: ηadd = 29% (Typ. ) Low IM3 = -46dBc@Po = 24.0dBm Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = 50Ω.

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Datasheet Details

Part number FLM0910-3F
Manufacturer SUMITOMO
File Size 306.32 KB
Description X / Ku-Band Internally Matched FET
Datasheet download datasheet FLM0910-3F Datasheet

Full PDF Text Transcription for FLM0910-3F (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FLM0910-3F. For precise diagrams, and layout, please refer to the original PDF.

FLM0910-3F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 35.0dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low ...

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(Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 24.0dBm Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FLM0910-3F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Conditio

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