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FLM1011-20F - X / Ku-Band Internally Matched FET

General Description

The FLM1011-20F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system.

Key Features

  • High Output Power: P1dB=43.0dBm(Typ. ) High Gain: G1dB=7.0dB(Typ. ) High PAE: ηadd=27%(Typ. ) Broad Band: 10.7～11.7GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package.

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Datasheet Details

Part number FLM1011-20F
Manufacturer SUMITOMO
File Size 276.29 KB
Description X / Ku-Band Internally Matched FET
Datasheet download datasheet FLM1011-20F Datasheet

Full PDF Text Transcription for FLM1011-20F (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FLM1011-20F. For precise diagrams, and layout, please refer to the original PDF.

FLM1011-20F X,Ku-Band Internally Matched FET FEATURES High Output Power: P1dB=43.0dBm(Typ.) High Gain: G1dB=7.0dB(Typ.) High PAE: ηadd=27%(Typ.) Broad Band: 10.7～11.7GHz ...

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n: G1dB=7.0dB(Typ.) High PAE: ηadd=27%(Typ.) Broad Band: 10.7～11.7GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package DESCRIPTION The FLM1011-20F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Rating 15 -5 93.

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